SanDisk Develops 32-nm NAND Flash

SAN FRANCISCO -- SanDisk Corporation (NASDAQ: SNDK) and Toshiba Corporation today announced the co-development of multi-level cell (MLC) NAND flash memory using 32-nanometer (nm) process technology to produce a 32-gigabit (Gb) 3-bits-per-cell (X3) memory chip. The breakthrough introduction is expected to quickly bring to market advanced technologies that will enable greater capacities and reduce manufacturing costs for products ranging from memory cards to Solid State Drives (SSD).

The development of our third-generation 3-bits-per-cell technology on 32nm within one and a half years after the introduction of the first generation of 3-bits-per-cell on 56nm shows the incredibly fast pace necessary to be a world-class producer in today’s industry,” said Sanjay Mehrotra, co-founder and president, SanDisk. “This allows us to offer higher capacities at compelling form factors while reducing manufacturing costs – all helping to expand our various product lines. This new development highlights SanDisk’s deep level of technical expertise and innovation that ultimately benefits consumers.”

SanDisk Corp.