SEOUL -- Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has made a significant advancement in the push for higher volume memory chips by developing the worlds first four gigabit (Gb) DDR3 DRAM chip, using 50 nanometer (nm) process technology.
With more and more data centers seeking a reduction in the number of servers they use, the development of low-power 4Gb DDR3 has become critical in reducing data center costs, improving server time management and increasing overall efficiency.
For the new generation of green servers, the 4Gb DDR3s high density combined with its lower level of power consumption will not only provide a reduction in electricity bills, but also a cutback in installment fees, maintenance fees and repair fees involving power suppliers and heat-emitting equipment.
We have leveraged our strength in innovation to develop the first 4Gb DDR3, in leading the industry to higher DRAM densities, said Kevin Lee, vice president, technical marketing, Samsung Semiconductor, Inc. By designing our 4Gb DDR3 using state-of-the-art 50-nm class technology, we are setting the stage for what ultimately will result in significant cost-savings, for servers and for the overall computing market, he added.
Samsung Electronics Co. Ltd.