Samsung Makes 40-nm NAND Memory Chip
Samsung brings 40-nm technology to production of Advanced Fusion Memory - Flex-OneNAND
March 11, 2009
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SEOUL -- Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun using 40-nanometer (nm) process technology to produce an eight-gigabit (Gb) Flex-OneNAND fusion memory chip. Samsung’s Flex-OneNAND is a proprietary memory device that provides both SLC and MLC NAND in a single cost-efficient chip. It has been designed for applications that require high speed and high reliability in processing both code and data content.
Applications using Flex-OneNAND are expected to expand from high-performance smart phones today, to full HDTVs, IPTVs and other high-end applications by year end.
“The 40-nm Flex-OneNAND is a tremendous advancement for the memory industry, one which offers a uniquely cost-effective approach to memory selection, while permitting designers the flexibility of adjusting designs up to the final design stage,” said Jim Elliott, memory vice president, Samsung Semiconductor, Inc.
Samsung Electronics Co. Ltd.
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