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Samsung Reveals the First 32 Gigabyte DDR3 Memory Module

NEW YORK--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in advanced memory
technology, announced today that it has developed the world's first 32
Gigabyte (GB) DDR3 module - for use in server systems. The new module
operates at 1.35-volts, in support of the global trend to cut power
usage in mass storage computing environments.

"Compared to the 8GB memory modules used in today's servers, our new
module packs an eco-sensitive wallop with four times the density at
significantly reduced power levels and no increase in the overall
footprint," said Jim Elliott, vice president, memory marketing, Samsung
Semiconductor, Inc. "For data centers, it's a powerhouse in energy
efficiency and performance," he added.

Based on Samsung's 50 nanometer (nm)-class 4 Gigabit (Gb) DDR3, the
1.35V DDR3 DRAM improves throughput by 20 percent over a 1.5V DDR3. Its
lower power consumption levels are in line with the pressing concern for
more energy-efficient "green" systems and components. The development of
low-power 4Gb DDR3 will be viewed as critical in reducing data center
costs, improving server time management and increasing overall
operational efficiency at higher densities.

For the new generation of green servers, the 4Gb DDR3's high density
combined with its lower level of power consumption will not only reduce
electricity bills, but also allow for a cutback on installment fees,
maintenance fees and repair fees involving power suppliers and
heat-emitting equipment.

The new 32GB registered dual inline memory module (RDIMM) consists of 72
4Gb DDR3 chip dies produced using Samsung's 50-nanometer class DRAM
production technology. A row of nine quad-die package (QDP) 16Gb DDR3s
are mounted on each side of the printed circuit board for a collective
32GB, highly compact configuration.

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