BOISE, Idaho -- Micron Technology, Inc. (NYSE:MU), today announced it has worked with Sun Microsystems, Inc., to develop a new single-level cell (SLC) enterprise NAND technology that dramatically extends the lifespan of flash-based storage for enterprise applications. The result of the collaboration has yielded production devices capable of achieving one million write cycles, a milestone that will help prepare the industry for new uses in solid state storage set to come from Sun, Micron and others. The new technology delivers the highest write/erase cycling capability of any NAND technology available on the market.
Micron is pleased to work with Sun on this landmark achievement, enabling the use of flash in new applications that were previously not possible because of the inherent write/erase cycle limitations of standard SLC and MLC NAND, said Brian Shirley, vice president of Microns memory group. We expect this technology to revolutionize the enterprise storage hierarchy and be adopted by a wide range of transaction-intensive applications, including solid state drives and storage systems, disk caching, as well as networking and industrial applications.
Micron Technology Inc.
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