BOISE, Idaho and SANTA CLARA, Calif. -- Today Intel Corporation and Micron Technology, Inc. (NYSE:MU) introduced the industrys first sub-40 nanometer (nm) NAND memory device, unveiling a 34nm 32 gigabit (Gb) multi-level cell chip. This process technology was jointly developed by Intel and Micron and manufactured by the companies NAND flash joint venture, IM Flash Technologies (IMFT). It is the smallest NAND process geometry on the market. The 32 Gb NAND chip is the only monolithic device at this density that fits into a standard 48-lead thin small-outline package (TSOP), providing a cost-effective path to higher densities in existing applications. Shipments of customer samples begin in June and mass production is expected during the second half of this calendar year.
This new 32 Gb device provides the best bit storage density available in the industry, said Brian Shirley, vice president of Microns Memory Group. Together with our partners at Intel, were proud to have now taken the lead in production process technology.
The introduction of 34nm process technology highlights IMFTs rapid progress and moves us to the forefront of NAND process technology, said Pete Hazen, director of marketing, Intel NAND Products Group. These advancements will expand the value proposition and accelerate the adoption of solid-state drive (SSD) solutions in computing platforms.
Intel Corp.
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